Paper Title:
Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor
  Abstract

The advantages of the CH3Cl carbon precursor were investigated in order to achieve good-quality homoepitaxial layers of the 4H-SiC polytype at temperatures lower than what was considered practical (or even possible) with C3H8-based growth. It was observed that the process window for good epilayer morphology becomes narrower when the growth temperature is decreased. Successful growth experiments have been conducted in this work down to a temperature of 1290-13000C, with the growth rate in excess of 2 +m/hr and a mirror-like defect-free epilayer surface morphology. Growth on a 2” substrate produced promising growth rate homogeneity. The dependence of the growth rate on SiH4 flow followed a clear exponential dependence. This trend is tentatively attributed to Si vapor condensation. Photoluminescence results suggest that the crystalline quality of the epilayers grown at 13000C is comparable to that of 17000C growth.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
167-170
DOI
10.4028/www.scientific.net/MSF.527-529.167
Citation
Y. Koshka, H. D. Lin, G. Melnychuk, C. Wood, "Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor", Materials Science Forum, Vols. 527-529, pp. 167-170, 2006
Online since
October 2006
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