Paper Title:
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
  Abstract

4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
179-182
DOI
10.4028/www.scientific.net/MSF.527-529.179
Citation
S. Leone, M. Mauceri, G. Pistone, G. Abbondanza, F. Portuese, G. Abagnale, G. L. Valente, D. Crippa, M. Barbera, R. Reitano, G. Foti, F. La Via, "SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor", Materials Science Forum, Vols. 527-529, pp. 179-182, 2006
Online since
October 2006
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Price
$32.00
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