Paper Title:
Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
  Abstract

Thick epitaxial layers of 4H-SiC both n- and p-type were grown using horizontal Hot- Wall CVD (HWCVD). No large difference in the carrier lifetime was observed for the layers grown on n- and p-type substrates. The carrier lifetime usually increases with the increasing thickness of the epilayer. To investigate if the growth conditions and material properties are changing during the longer growth time a sample was prepared with uniformly varying epilayer thickness from 20μm on one side to 110μm on other side. Results of optical and electrical measurements, the variation in background impurities and other deep levels are discussed. Furthermore, the properties of thick layers grown on on-axis substrates are presented.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
183-186
DOI
10.4028/www.scientific.net/MSF.527-529.183
Citation
J. Ul Hassan, C. Hallin, P. Bergman, E. Janzén, "Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates", Materials Science Forum, Vols. 527-529, pp. 183-186, 2006
Online since
October 2006
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