Paper Title:
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
  Abstract

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
187-190
DOI
10.4028/www.scientific.net/MSF.527-529.187
Citation
R. L. Myers-Ward, Y. Shishkin, O. Kordina, I. Haselbarth, S. E. Saddow, "High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 187-190, 2006
Online since
October 2006
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Price
$32.00
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