High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD |
|
| Journal | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 187-190 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.187 |
| Citation | Rachael L. Myers-Ward et al., 2006, Materials Science Forum, 527-529, 187 |
| Online since | October, 2006 |
| Authors | Rachael L. Myers-Ward, Y. Shishkin, Olof Kordina, I. Haselbarth, Stephen E. Saddow |
| Keywords | Chemical Vapour Deposition (CVD), Homoepitaxy, Hot-Wall CVD |
| Abstract | A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
