Highly Uniform SiC Epitaxy for MESFET Fabrication

Casady, Jeff B.; Matocha, Kevin; Mazzola, Michael S.; Mazzola, Janice; Hoff, Carl; Casady, Janna R. B.; Zhang, Jie; Rivas, C.; Romano, Esteban

Paper Titles

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor, p.179
Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates, p.183
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD, p.187
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition, p.191
Highly Uniform SiC Epitaxy for MESFET Fabrication, p.195
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization, p.199
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH₃SiH₃ and C₃H₈ Sources, p.203
Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates, p.207
Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena, p.211

Home > Materials Science Forum > Silicon Carbide and Related Materials 2005 > Highly Uniform SiC Epitaxy for MESFET Fabrication

Paper Title:

Highly Uniform SiC Epitaxy for MESFET Fabrication

Periodical	Materials Science Forum (Volumes 527 - 529)
Main Theme	Silicon Carbide and Related Materials 2005
Edited by	Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages	195-198
DOI	10.4028/www.scientific.net/MSF.527-529.195
Citation	Jie Zhang et al., 2006, Materials Science Forum, 527-529, 195
Online since	October, 2006
Authors	Jie Zhang, Janice Mazzola, Carl Hoff, C. Rivas, Esteban Romano, Janna R. B. Casady, Michael S. Mazzola, Jeff B. Casady, Kevin Matocha
Keywords	Doping, MESFET, SIMS, Thickness, Uniform Epitaxy
Price	US$ 28,-

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Abstract

This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer.