Paper Title:
Highly Uniform SiC Epitaxy for MESFET Fabrication
  Abstract

This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
195-198
DOI
10.4028/www.scientific.net/MSF.527-529.195
Citation
J. Zhang, J. Mazzola, C. Hoff, C. Rivas, E. Romano, J. R. B. Casady, M. S. Mazzola, J. B. Casady, K. Matocha, "Highly Uniform SiC Epitaxy for MESFET Fabrication", Materials Science Forum, Vols. 527-529, pp. 195-198, 2006
Online since
October 2006
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Price
$32.00
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