The epitaxial growth of SiC by a hot-wall CVD system using monomethylsilane (CH3SiH3) as a precursor is described. In the case of CH3SiH3 source only, an undoped homoepitaxial layer showed an n-type conduction around 1016-1017cm-3 on the Si face. To improve the quality of epilayers, the simultaneous supply of CH3SiH3 and C3H8 was carried out. The pit density of grown layers was reduced from 105 to 103cm-2, and a donor concentration as low as 1.6×1014cm-3 was achieved. An attempt to increase of the growth rate was also investigated.