Paper Title:
Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
  Abstract

The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the surface of on-axis substrate in the presence of source gases. However, there were no circular etch pits on the surface of off-axis substrates. In addition, the surface etched by H2 gas did not show circular etch pits even on nearly on-axis substrates. The shape of the circular etch pits was similar to spiral one. The initial growth behavior of epilayers was also investigated with various C/Si ratios of source gases (0.6

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
207-210
DOI
10.4028/www.scientific.net/MSF.527-529.207
Citation
W. Bahng, H. J. Cheong, I. H. Kang, S. C. Kim, K. H. Kim, N. K. Kim, "Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 207-210, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969
Authors: Yong Zhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Koji Sato, Katsunori Danno, Takayuki Shirai, Kazuaki Sato, Takeshi Bessho, Yumiko Takahashi, Yoshiki Yamashita, Keiichi Hirano
2.2 Point and Extended Defects
Abstract:Threading dislocations (TDs) in 4H-SiC have been studied by comparing etch pits formed by NaOH vapor etching with results of synchrotron...
389
Authors: Alexandre Ellison, Erik Sörman, Björn Sundqvist, Björn Magnusson, Yu Yang, Jian Qiu Guo, O.Y. Goue, Balaji Raghothamachar, Michael Dudley
2.2 Point and Extended Defects
Abstract:X-ray topography shows that selective KOH etching after CVD growth of n-type epilayers on highly N doped 4H SiC substrates can be used to...
376