Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 207-210 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.207 |
| Citation | Wook Bahng et al., 2006, Materials Science Forum, 527-529, 207 |
| Online since | October, 2006 |
| Authors | Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim |
| Keywords | 4H-SiC, C/Si Ratio, Epitaxy, Micropipe, On-Axis, Selective Etching |
| Abstract | The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was
investigated. We have observed circular etch pits on the surface of on-axis substrate in the presence of
source gases. However, there were no circular etch pits on the surface of off-axis substrates. In
addition, the surface etched by H2 gas did not show circular etch pits even on nearly on-axis substrates.
The shape of the circular etch pits was similar to spiral one. The initial growth behavior of epilayers
was also investigated with various C/Si ratios of source gases (0.6 |
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