Paper Title:
Halide-CVD Growth of Bulk SiC Crystals
  Abstract

A novel approach to the high growth rate Chemical Vapor Deposition of SiC is described. The Halide Chemical Vapor Deposition (HCVD) method uses SiCl4, C3H8 (or CH4), and hydrogen as reactants. The use of halogenated Si source and of separate injection of Si and C precursors allows for preheating of source gases without causing premature chemical reactions. The stoichiometry of HCVD crystals can be controlled by changing the C/Si flow ratio and can be kept constant throughout growth, in contrast to the Physical Vapor Transport technique. HCVD was demonstrated to deposit high crystalline quality, very high purity 4H- and 6H-SiC crystals with growth rates comparable to other bulk SiC growth techniques. The densities of deep electron and hole traps are determined by growth temperature and C/Si ratio and can be as low as that found in standard silane-based CVD epitaxy. At high C/Si flow ratio, the resistivity of HCVD crystals exceeds 105 _cm. These characteristics make HCVD an attractive method to grow SiC for applications in high-frequency and/or high voltage devices.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
21-26
DOI
10.4028/www.scientific.net/MSF.527-529.21
Citation
A.Y. Polyakov, M. A. Fanton, M. Skowronski, H. J. Chung , S. Nigam, S. W. Huh, "Halide-CVD Growth of Bulk SiC Crystals", Materials Science Forum, Vols. 527-529, pp. 21-26, 2006
Online since
October 2006
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$32.00
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