Halide-CVD Growth of Bulk SiC Crystals |
| Journal |
Materials Science Forum (Volumes 527 - 529) |
| Volume |
Silicon Carbide and Related Materials 2005 |
| Edited by |
Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages |
21-26 |
| DOI |
10.4028/www.scientific.net/MSF.527-529.21 |
| Online since |
October, 2006 |
| Authors |
A.Y. Polyakov,
Mark A. Fanton,
Marek Skowronski,
Hun Jae Chung,
Saurav Nigam,
Sung Wook Huh
|
| Keywords |
Bulk Growth, Crystalline Quality, Deep Traps, Halide CVD, Impurities, Semi-Insulating Crystals, Stoichiometry |
| Abstract |
A novel approach to the high growth rate Chemical Vapor Deposition of SiC is
described. The Halide Chemical Vapor Deposition (HCVD) method uses SiCl4, C3H8 (or CH4), and
hydrogen as reactants. The use of halogenated Si source and of separate injection of Si and C
precursors allows for preheating of source gases without causing premature chemical reactions. The
stoichiometry of HCVD crystals can be controlled by changing the C/Si flow ratio and can be kept
constant throughout growth, in contrast to the Physical Vapor Transport technique. HCVD was
demonstrated to deposit high crystalline quality, very high purity 4H- and 6H-SiC crystals with
growth rates comparable to other bulk SiC growth techniques. The densities of deep electron and
hole traps are determined by growth temperature and C/Si ratio and can be as low as that found in
standard silane-based CVD epitaxy. At high C/Si flow ratio, the resistivity of HCVD crystals
exceeds 105 _cm. These characteristics make HCVD an attractive method to grow SiC for
applications in high-frequency and/or high voltage devices. |
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