Paper Title:
Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
  Abstract

We have proposed a novel model of hydrogen etching of SiC based on thermal equilibrium and have confirmed the validity of our model through the analysis of H2 etching experiments. The experimental results obtained showed that the etching rate is expressed by a linear equation with the H2 flow rate, by an exponential function with the reciprocal of the temperature and by a power law with the pressure. These results agree well with the theoretical behaviors derived from our model.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
211-214
DOI
10.4028/www.scientific.net/MSF.527-529.211
Citation
Y. Ishida, T. Takahashi, H. Okumura, K. Arai, K. Kimura, K. Nakamura, S. Yoshida, "Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena", Materials Science Forum, Vols. 527-529, pp. 211-214, 2006
Online since
October 2006
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Price
$32.00
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