Paper Title:
Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
  Abstract

4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
219-222
DOI
10.4028/www.scientific.net/MSF.527-529.219
Citation
K. Wada, T. Kimoto, K. Nishikawa, H. Matsunami, "Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 219-222, 2006
Online since
October 2006
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