Paper Title:
Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
  Abstract

Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180 #m/h. Even in such thick layers the surfaces are smooth and only disturbed by polishing scratches. The surfaces contain steps which facilitate reproduction of the substrate polytype.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
227-230
DOI
10.4028/www.scientific.net/MSF.527-529.227
Citation
M. Syväjärvi, R. Yakimova, G. R. Yazdi, A. Arjunan, E. Toupitsyn, T. S. Sudarshan, "Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 227-230, 2006
Online since
October 2006
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