Paper Title:
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
  Abstract

Propagation and nucleation of basal plane dislocations (BPDs) in 4H-SiC(000-1) and (0001) epitaxy were compared. Synchrotron reflection X-ray topography was performed before and after epitaxial growth to classify the BPDs into those propagated from the substrate into the epilayer and those nucleated in the epilayer. It was revealed that the propagation ratio of BPDs for the (000-1) epitaxy was significantly smaller than that for the (0001) epitaxy. Growing (000-1) epilayers at a high C/Si ratio of 1.2 achieves a further reduction in BPDs to only 3 cm-2 for those propagated from the substrate, and 16 cm-2 for those nucleated in the epilayer. A dramatic increase was also found in the nucleation of BPDs omitting the re-polishing and in-situ H2 etching procedure.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
231-234
DOI
10.4028/www.scientific.net/MSF.527-529.231
Citation
H. Tsuchida, I. Kamata, T. Miyanagi, T. Nakamura, K. Nakayama, R. Ishii, Y. Sugawara, "Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy", Materials Science Forum, Vols. 527-529, pp. 231-234, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara
Abstract:In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing...
97
Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
Abstract:We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated...
147
Authors: Ze Hong Zhang, Tangali S. Sudarshan
Abstract:A method was developed in our laboratory to grow low basal plane dislocation (BPD) density and BPD-free SiC epilayers. The key approach is...
243
Authors: Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano, L. Storasta, Toshiyuki Miyanagi
Abstract:Synchrotron reflection X-ray topography and KOH etching were applied to investigate the effects of the ion implantation/annealing process on...
271
Authors: Hai Zheng Song, Tangali S. Sudarshan
Chapter 2: SiC Epitaxial Growth
Abstract:An optimized molten KOH-NaOH eutectic etching method is developed to reveal defects in highly n-doped SiC substrates and to pre-treat the...
125