Paper Title:
Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
  Abstract

We report on further observations of homoepitaxially grown 4H silicon carbide (SiC) cantilevers on commercial on-axis mesa patterned substrates. Mesa shapes with hollow interiors were designed to significantly increase the ratio of dislocation-free cantilever area to pregrowth mesa area. Mesas that did not contain axial screw dislocations (SD’s) continued to expand laterally until uncontrolled growth in the trench regions rises up to interfere / merge with the laterally expanding cantilevers. Molten KOH etching revealed high defect density in regions where trench growth merged with the laterally expanding cantilevers. The remaining portions of the cantilevers, except for central coalescence points, remained free of dislocations.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
247-250
DOI
10.4028/www.scientific.net/MSF.527-529.247
Citation
A. J. Trunek, P. G. Neudeck, D. J. Spry, "Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers", Materials Science Forum, Vols. 527-529, pp. 247-250, 2006
Online since
October 2006
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Price
$32.00
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2.2 Point and Extended Defects
Abstract:Threading dislocations (TDs) in 4H-SiC have been studied by comparing etch pits formed by NaOH vapor etching with results of synchrotron...
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