Paper Title:
SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology
  Abstract

In this work, we have developed an innovative epitaxial growth process named the “Migration Enhanced Embedded Epitaxial” (ME3) growth process. It was found that at elevated growth temperatures, the epitaxial growth at the bottom of the trenches is greatly enhanced compared to growth on the sidewalls. This is attributed to the large surface diffusion length of reactant species mainly due to the higher growth temperature. In addition, it was found that this high temperature ME3 growth process is not influenced by the crystal-orientation. Similar growth behavior was observed for stripe-trench structures aligned either along the [11-20] or [1-100] directions. No difference was observed in the electrical performance of the pn diodes fabricated on either oriented stripe geometry. The ME3 process can also be used as an alternative to ion-implantation technology for selective doping process.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
251-254
DOI
10.4028/www.scientific.net/MSF.527-529.251
Citation
Y. Takeuchi, M. Kataoka, T. Kimoto, H. Matsunami, R. K. Malhan, "SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology", Materials Science Forum, Vols. 527-529, pp. 251-254, 2006
Online since
October 2006
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Price
$32.00
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