Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried out at different speeds on porous layers of two different thicknesses. The quality of the SiC films was evaluated by X-ray diffraction and photoluminescence techniques. Based on the measurements, both the growth speed and the thickness of the porous layer buried underneath the epilayers do not appear to influence the structural integrity of the films. The intensity of the near bandedge low temperature photoluminescence appears stronger by a factor of two in films grown on porous layers.