Paper Title:
Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
  Abstract

We have previously reported on the selective growth of 4H-SiC epitaxial layers on a 4HSiC substrates in a chemical vapor deposition (CVD) reactor using TaC mask. It was shown that pn junctions fabricated using selectively grown n-layers on trench etched p-substrates have properties similar to the mesa etched pn junction diodes, indicating good interface properties. In this paper, we present more systematic studies on the selective growth and in-situ selective etching of 4H-SiC using a TaC mask. The morphological evolution during selective epitaxy as a function of crystallographic orientation was analyzed. Anisotropy in surface morphology along <11-20> and <1-100> has been observed. Cross sectional SEM viewgraphs show lateral overgrowth on the TaC mask, and the extent of lateral overgrowth varied with the stripe orientation. It was found that the “growth window” for selective growth was a function of the surface area covered by the TaC mask as well as the window opening to mask width ratios. Experiments with various window widths to mask width ratios have been carried out to investigate the selective growth process using this mask.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
259-262
DOI
10.4028/www.scientific.net/MSF.527-529.259
Citation
C. H. Li, I. Bhat, T. P. Chow, "Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask", Materials Science Forum, Vols. 527-529, pp. 259-262, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
Abstract:We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated...
147
Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim
Abstract:The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the...
207
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna
Abstract:A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers,...
95
Authors: Hidenori Koketsu, Tomoaki Hatayama, Kento Amishima, Hiroshi Yano, Takashi Fuyuki
Abstract:The sloped sidewall angle in 4H-SiC mesa structure could be controlled by a thermal etching at 900oC in chlorine (Cl2) based ambience. 4H-SiC...
485