Paper Title:
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
  Abstract

Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor Deposition (HCVD) process using silicon tetrachloride, propane and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 oC. Silicon carbide crystals were deposited at growth rates in the 100-300 μm/hr range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. High resolution x-ray diffraction measurements show that the growth on Si-face of 6H- and C-face of 4H-SiC substrates resulted in single crystal 6H- and 4H-SiC polytype, respectively. The growth rate results have been interpreted using thermodynamic equilibrium calculations.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
27-30
DOI
10.4028/www.scientific.net/MSF.527-529.27
Citation
S. Nigam, H. J. Chung , S. W. Huh, J.R. Grim, A.Y. Polyakov, M. A. Fanton, B.E. Weiland, D. Snyder, M. Skowronski, "Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC", Materials Science Forum, Vols. 527-529, pp. 27-30, 2006
Online since
October 2006
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Price
$32.00
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