Paper Title:
Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
  Abstract

Al-Si and Ge-Si systems were studied for selective epitaxial growth (SEG) of 4H-SiC by the Vapour-Liquid-Solid mechanism. Al-Si and Ge-Si bilayers stackings were deposited on 8° off, Si face, 4H-SiC substrates. After patterning of the layers, the samples were heated up to 1000°C and 1220°C, respectively, for Al-Si and Ge-Si stackings in order to melt the layers. Propane was introduced either during the initial heating ramp, before melting of the alloy, or after reaching the temperature plateau. It was found that introduction of propane before melting was a key parameter in order to improve the homogeneity of the deposit. In both cases, SEG of SiC was achieved. However, the best results were obtained with Ge-Si system giving smooth and uniform ∼100 nm thick epitaxial deposits on all the pattern sizes and shapes. Ge incorporation in the SiC was found to be rather limited but homogeneous in the layer.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
275-278
DOI
10.4028/www.scientific.net/MSF.527-529.275
Citation
G. Ferro, M. Soueidan, C. Jacquier, P. Godignon, T. Stauden, J. Pezoldt, M. Lazar, J. Montserrat, Y. Monteil, "Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts", Materials Science Forum, Vols. 527-529, pp. 275-278, 2006
Online since
October 2006
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