Paper Title:
Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
  Abstract

Using the Vapor-Liquid-Solid mechanism in Ge-Si melts we have grown 3C-SiC layers on top of <0001>-oriented, Si face, 6H-SiC substrates. The surface morphology was free of spiral growth but highly step bunched. The 3C-SiC polytype was identified by micro- Raman spectroscopy and confirmed by low temperature photoluminescence. Electron backscattering diffraction mapping showed that the upper side of the layers is single-domain, i.e. that the 3C-SiC material displays only one in-plane orientation. Cross-sectional and planeview TEM investigations allowed detection of double positioning boundaries but only confined at the substrate/epilayer interface. The main additional defects found were stacking faults (SF) with a density of ~ 4.103 cm-1. Forming at the interface, they propagate through the epitaxial layer.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
287-290
DOI
10.4028/www.scientific.net/MSF.527-529.287
Citation
M. Soueidan, G. Ferro, J. Stoemenos, E. K. Polychroniadis, D. Chaussende, F. Soares, S. Juillaguet, J. Camassel, Y. Monteil, "Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism", Materials Science Forum, Vols. 527-529, pp. 287-290, 2006
Online since
October 2006
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