Paper Title:
Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
  Abstract

Flash lamp annealing of multilayer stack of the type SiC/Silicon overlayer(SOL)/SiC reduces the defect densities in the 3C-SiC/Si heteroepitaxial structure. Ge and C additions to the SOL lead to a substantial increase of the mass transfer from the upper layer to the lower SiC layer. If the Ge content of the SOL and the flash lamp annealing conditions are properly chosen a homogeneous layer with a 3C-SiC thickness between 150 and 200 nm can be achieved corresponding to a growth rate between 7.5 and 10.0 +m/s. The thickening of the lower layer depends on the SOL composition. Ge and/or C incorporation into the SOL and therefore into the Si melt enhances the mass transport from the upper SiC layer to the lower one.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
295-298
DOI
10.4028/www.scientific.net/MSF.527-529.295
Citation
J. Pezoldt, F. M. Morales, T. Stauden, C. Förster, E. K. Polychroniadis, J. Stoemenos, D. Panknin, W. Skorupa, "Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification", Materials Science Forum, Vols. 527-529, pp. 295-298, 2006
Online since
October 2006
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Price
$32.00
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