Paper Title:
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
  Abstract

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
299-302
DOI
10.4028/www.scientific.net/MSF.527-529.299
Citation
H. Shimizu, Y. Aoyama, "Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD", Materials Science Forum, Vols. 527-529, pp. 299-302, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Long Weng, Wu Tang, Yu Tao Wu, Long Jiang Deng
Abstract:Sn doped indium oxide (ITO) films were fabricated on polyethylene terephtalate (PET) substrate by magnetron sputtering at low deposition...
1867
Authors: S.C. Chen, T.Y. Kuo, Y.C. Lin, Po Cheng Kuo
Abstract:The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of...
859
Authors: Ping Luan, Jian Sheng Xie, Jin Hua Li
Chapter 3: Surface, Subsurface, and Interface Phenomena
Abstract:Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films...
822
Authors: Fei Xiong Mao, Tao Liu, Shi Wei Liu, Jing Kun Yu
Chapter 16: Sustainable Manufacturing Technologies
Abstract:Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were...
2834
Authors: M. Rajendraprasad Reddy, Mutsumi Sugiyama, K. T. Ramakrishna Reddy
Chapter 13: Thin Films
Abstract:Nickel-doped ZnO thin films with different Ni contents (0 - 15%) were deposited on glass substrate at 350°C by a spray pyrolysis technique....
1423