Reduction of Dislocations in the Bulk Growth of SiC Crystals |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
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| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 3-8 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.3 |
| Citation | Daisuke Nakamura, 2006, Materials Science Forum, 527-529, 3 |
| Online since | October, 2006 |
| Authors | Daisuke Nakamura |
| Keywords | Bulk Growth, Dislocations, Etching, Sublimation, Synchrotron X-ray Topography |
| Abstract | Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also dislocations should be reduced or eliminated perfectly. This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals. Moreover, large diameter crystals (>2”) with low dislocation density were successfully grown by the process. |
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