Paper Title:
Reduction of Dislocations in the Bulk Growth of SiC Crystals
  Abstract

Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also dislocations should be reduced or eliminated perfectly. This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals. Moreover, large diameter crystals (>2”) with low dislocation density were successfully grown by the process.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
3-8
DOI
10.4028/www.scientific.net/MSF.527-529.3
Citation
D. Nakamura, "Reduction of Dislocations in the Bulk Growth of SiC Crystals ", Materials Science Forum, Vols. 527-529, pp. 3-8, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
Abstract:We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated...
147
Authors: Erwin Schmitt, Thomas L. Straubinger, Michael Rasp, Michael Vogel, Andreas Wohlfart
Abstract:We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the...
11
Authors: Ping Wu, Murugesu Yoganathan, Ilya Zwieback, Yi Chen, Michael Dudley
Abstract:Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results...
333
Authors: Fumio Kawamura, Hidekazu Umeda, Masanori Morishita, Ryohei Gejo, Masaki Tanpo, Mamoru Imade, Naoya Miyoshi, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, Yasuo Kitaoka
Abstract:We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the...
1245
Authors: Yong Zhao Yao, Yukari Ishikawa, Koji Sato, Yoshihiro Sugawara, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho
Chapter 9: Processing Diverse
Abstract:To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face) of 4H-SiC, a...
829