Paper Title:
Growth of 3C-SiC on Si Molds for MEMS Applications
  Abstract

A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The growth rate achieved for this process was about 10 μm/h. The process consists of silane/propane/hydrogen chemistry with HCl used as a growth additive to increase the growth rate. 3C-SiC has also been grown on 22, 52 and 123 +m deep etched MEMS structures formed by DRIE of (100) Si at a rate of about 8 +m/h. Secondary electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to analyze the quality of the 3C-SiC films.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
307-310
DOI
10.4028/www.scientific.net/MSF.527-529.307
Citation
M. Reyes, M. Waits, S. Harvey, Y. Shishkin, B. Geil, J.T. Wolan, S. E. Saddow, "Growth of 3C-SiC on Si Molds for MEMS Applications", Materials Science Forum, Vols. 527-529, pp. 307-310, 2006
Online since
October 2006
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Price
$32.00
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