Paper Title:
Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
  Abstract

Raman spectroscopy using deep UV (DUV) light excitation has been applied to characterizing process-induced defects in surface layers in SiC. Raman spectra of P+-ion implanted and post annealed SiC have been measured as a function of dose level and annealing temperature. The recovery of the crystallinity and electrical activity have been evaluated. Precipitation of excess phosphorus was found in heavily doped specimens. High dose implanted and post annealed samples show uneven distribution of residual defects, which is demonstrated by mapping of Raman bandwidth. Damage in 4H-SiC surfaces, which were mechanically polished with various sizes of abrasives, has been evaluated from DUV micro-Raman measurements. The Raman analysis demonstrates that bandwidth and peak frequency can be used as monitors of the polish–induced damage. It is found that localized defects reducing free carrier density remain even after polishing with small sized abrasives.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
333-338
DOI
10.4028/www.scientific.net/MSF.527-529.333
Citation
S. Nakashima, T. Mitani, "Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy", Materials Science Forum, Vols. 527-529, pp. 333-338, 2006
Online since
October 2006
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Price
$32.00
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