Paper Title:
Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
  Abstract

Visible and deep UV Raman measurements have been applied to investigate the structural and electrical properties of stacking disordered 3C-SiC crystals. It is found that free-carrier density shows the significant dependence on the density of stacking faults in 3C-SiC. The density of stacking faults has been estimated from the comparison between experimentally obtained Raman spectra and Raman intensity profiles simulated using one-dimensional lattice models considering the disorder in bond polarizability arrangement.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
343-346
DOI
10.4028/www.scientific.net/MSF.527-529.343
Citation
T. Mitani, S. Nakashima, H. Okumura, H. Nagasawa, "Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals", Materials Science Forum, Vols. 527-529, pp. 343-346, 2006
Online since
October 2006
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