Paper Title:
Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
  Abstract

Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a 54.7 degrees angle. Growth on the 4H-SiC {03-38} seed has the potential to achieve high quality crystals without micropipes and stacking faults. Micropipe-free c-plane 4H-SiC wafers were achieved by growth on the 4H-SiC {03-38} seed. A transmission X-ray topograph image of the micropipe free c-plane wafer revealed that there are no macroscopic defects with displacements.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
35-38
DOI
10.4028/www.scientific.net/MSF.527-529.35
Citation
T. Furusho, R. Kobayashi, T. Nishiguchi, M. Sasaki, K. Hirai, T. Hayashi, H. Kinoshita, H. Shiomi, "Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds", Materials Science Forum, Vols. 527-529, pp. 35-38, 2006
Online since
October 2006
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Price
$32.00
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