Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
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| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 35-38 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.35 |
| Citation | Tomoaki Furusho et al., 2006, Materials Science Forum, 527-529, 35 |
| Online since | October, 2006 |
| Authors | Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi |
| Keywords | 4H-SiC {03-38}, Micropipe Free Crystal, Sublimation Growth |
| Abstract | Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a 54.7 degrees angle. Growth on the 4H-SiC {03-38} seed has the potential to achieve high quality crystals without micropipes and stacking faults. Micropipe-free c-plane 4H-SiC wafers were achieved by growth on the 4H-SiC {03-38} seed. A transmission X-ray topograph image of the micropipe free c-plane wafer revealed that there are no macroscopic defects with displacements. |
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