Paper Title:
Peierls Barriers and Core Properties of Partial Dislocations in SiC
  Abstract

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We show that the stability of the dislocation cores and the Peierls barriers of the first kind are chargestate dependent. In intrinsic bulk the partials are stable in the neutral asymmetric reconstructions. These reconstructions have no deep states and are characterized by high Peierls barriers. In strongly doped regime the symmetric reconstructions can become more stable. These reconstructions are always electrically active with a half filled band across the band gap. In particular the symmetric reconstructions of the 30° partial have a lower Peierls barriers than the respective asymmetric ones and could be the cause of the 1.8 eV electroluminescence peak observed under carrier injection conditions.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
359-362
DOI
10.4028/www.scientific.net/MSF.527-529.359
Citation
G. Savini, M.I. Heggie, S. Öberg, "Peierls Barriers and Core Properties of Partial Dislocations in SiC", Materials Science Forum, Vols. 527-529, pp. 359-362, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Badylevich, Yu.L. Iunin, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan
433
Authors: A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri N. Makarov
383
Authors: E. Tochigi, A. Nakamura, Naoya Shibata, Takahisa Yamamoto, K.P.D. Lagerlöf, Yuichi Ikuhara
Abstract:Dislocation structure of 10º low-angle tilt grain boundary in α-Al2O3 has been observed by high-resolution electron microscopy (HRTEM). It...
979
Authors: Manfred Reiche
Abstract:The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of...
57
Authors: Michael Dudley, Yi Chen, Xian Rong Huang, Rong Hui Ma
Abstract:A review is presented of the current understanding of the dislocation configurations observed in PVT-grown 4H- and 6H-SiC boules and...
261