Paper Title:
Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
  Abstract

In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been investigated by the technique of electron beam induced current (EBIC). The recombination behavior of C- and Si-core dislocations is discussed. It is proposed that nonradiative recombination significantly exceeds radiative recombination on both the C- and Si-core partial dislocations. At the same time, predominantly radiative recombination takes place in the faulted planes that presumably act as quantum wells.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
367-370
DOI
10.4028/www.scientific.net/MSF.527-529.367
Citation
S.I. Maximenko, P. Pirouz, T. S. Sudarshan, "Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes", Materials Science Forum, Vols. 527-529, pp. 367-370, 2006
Online since
October 2006
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