Paper Title:
Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
  Abstract

The nucleation sites of stacking faults (SFs) during forward current stress operation of 4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not exhibit SF formation under current stressing at 200A/cm2 for 3 hours.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
371-374
DOI
10.4028/www.scientific.net/MSF.527-529.371
Citation
Z. H. Zhang, A.E. Grekov, P. Sadagopan, S.I. Maximenko, T. S. Sudarshan, "Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers", Materials Science Forum, Vols. 527-529, pp. 371-374, 2006
Online since
October 2006
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