Paper Title:
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
  Abstract

We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination with high-power laser irradiation makes it possible to investigate the formation of SSFs, which lie between a pair of partial dislocations formed by dissociation of a basal plane dislocation (BPD), without fabrication of pin diodes. Using this technique, we investigated the annealing effect on SSFs. Comparing before and after annealing at 600°C for 10 min, it became obvious that high-temperature annealing results in shrinking of the faulted area of the SSFs. The SSFs form into the same features as those before annealing when high-power laser irradiation is performed again on the same area. This result shows that the faulted area of SSFs shrinks by 600°C annealing but the nuclei of SSFs (BPDs) do not disappear.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
375-378
DOI
10.4028/www.scientific.net/MSF.527-529.375
Citation
T. Miyanagi, H. Tsuchida, I. Kamata, T. Nakamura, R. Ishii, K. Nakayama, Y. Sugawara, "Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping", Materials Science Forum, Vols. 527-529, pp. 375-378, 2006
Online since
October 2006
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Authors: Patrick Berwian, Daniel Kaminzky, Katharina Roßhirt, Birgit Kallinger, Jochen Friedrich, Steffen Oppel, Adrian Schneider, Michael Schütz
Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Abstract:A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other...
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