Paper Title:
Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction
  Abstract

Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by annealing at 550°C or 700°C with or without an additional compressive stress. The defects are planar and always consist of double stacking faults dragged by a pair of partial dislocations. In a pair, the partial dislocations have the same line direction, Burgers vector and core composition. All the identified gliding dislocations have a silicon core. An analysis of their expansion during annealing proves that C(g) partial segments can be created but that C(g) partial dislocations are immobile.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
379-382
DOI
10.4028/www.scientific.net/MSF.527-529.379
Citation
M. Lancin, G. Regula, J. Douin, H. Idrissi, L. Ottaviani, B. Pichaud, "Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction", Materials Science Forum, Vols. 527-529, pp. 379-382, 2006
Online since
October 2006
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$32.00
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