Paper Title:
Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes
  Abstract

Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electron microscopy (TEM) observations of these diodes indicate that these static planar defects are different in structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiC PiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded by partial dislocations, and that the SFs associated with these partials display both Frank and Shockley character. That is, the Burgers vector of such partial dislocations is 1/12<4-403>. For sessile Frank partial dislocations, glide is severely constrained by the need to inject either atoms or vacancies into the expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentally different from other planar defects found in 4H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
383-386
DOI
10.4028/www.scientific.net/MSF.527-529.383
Citation
M. E. Twigg, R. E. Stahlbush, P. A. Losee, C. H. Li, I. Bhat, T. P. Chow, "Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes", Materials Science Forum, Vols. 527-529, pp. 383-386, 2006
Online since
October 2006
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