Paper Title:
Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
  Abstract

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
391-394
DOI
10.4028/www.scientific.net/MSF.527-529.391
Citation
N. Camara, K. Zekentes, E. Bano, A. Thuaire, A. A. Lebedev, "Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 391-394, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Nicolas Camara, Edwige Bano, Konstantinos Zekentes
1017
Authors: Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Stephan G. Müller, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.
1113
Authors: Nicolas Camara, Aurelie Thuaire, Edwige Bano, Konstantinos Zekentes
Abstract:The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial...
773
Authors: Aurelie Thuaire, Michel Mermoux, Edwige Bano, Alexandre Crisci, Francis Baillet, Konstantinos Zekentes
Abstract:Raman spectroscopy and photoemission microscopy were coupled as two complementary non-destructive optical techniques in order to study...
909
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969