Paper Title:
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
  Abstract

We have developed non-destructive in-house observation techniques for dislocations and stacking faults (SFs) in 4H-SiC epilayers. Low temperature photoluminescence (PL) mapping was carried out at 100K using He-Cd laser (325 nm) as an exciation source. PL mapping at ~420 nm was used to investigate basal plane dislocations (BPDs), Shockley stacking faults (SSFs) and boundary, while PL mapping at ~470 nm and 100K obtained in-grown SF images. In addition, using a high-resolution laboratory X-ray topography system with a four-crystal collimator, we succeeded in recording BPDs propagating along [11-20]. From the measurement results, new evaluation techniques for dislocations and SFs other than KOH etching and Synchotron radiation topography were demonstrated on Si- and C-face 4H-SiC epilayers.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
415-418
DOI
10.4028/www.scientific.net/MSF.527-529.415
Citation
I. Kamata, H. Tsuchida, T. Miyanagi, T. Nakamura, "Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers", Materials Science Forum, Vols. 527-529, pp. 415-418, 2006
Online since
October 2006
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