Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy? |
| Journal |
Materials Science Forum (Volumes 527 - 529) |
| Volume |
Silicon Carbide and Related Materials 2005 |
| Edited by |
Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages |
419-422 |
| DOI |
10.4028/www.scientific.net/MSF.527-529.419 |
| Online since |
October, 2006 |
| Authors |
Ze Hong Zhang,
Amitesh Shrivastava,
Tangali S. Sudarshan
|
| Keywords |
Basal Plane Dislocation, Conversion, Degradation, Epitaxy, PIN Diode |
| Abstract |
Dislocations were tracked from 4H-SiC epilayer to the substrate by a new method based
on combination of molten KOH etching and Reactive Ion Etching. It was found that basal plane
dislocations (BPDs) with dislocation lines parallel (or approximately parallel) to the off-cut
direction might propagate as BPDs into the epilayer, while those with dislocation lines forming
large angles (>10ยบ) with the off-cut direction will get converted to threading edge dislocations
(TEDs). A model is proposed to explain the observations. |
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