Paper Title:
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
  Abstract

Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar mapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edge dislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thick Ni Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBIC signals was proportional to the depth position of defect. In addition, the information of the decomposition and combination for dislocations can be obtained from the fluctuation of EBIC signal along the scanning position.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
423-426
DOI
10.4028/www.scientific.net/MSF.527-529.423
Citation
Y. Yanagisawa, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki, "3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method", Materials Science Forum, Vols. 527-529, pp. 423-426, 2006
Online since
October 2006
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