Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals |
| Journal |
Materials Science Forum (Volumes 527 - 529) |
| Volume |
Silicon Carbide and Related Materials 2005 |
| Edited by |
Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages |
43-46 |
| DOI |
10.4028/www.scientific.net/MSF.527-529.43 |
| Online since |
October, 2006 |
| Authors |
A. Gupta,
E. Semenas,
Ejiro Emorhokpor,
J. Chen,
Ilya Zwieback,
Andrew E. Souzis,
Thomas Anderson
|
| Keywords |
4H-SiC, 6H-SiC, Micropipe, Semi-insulating (SI), Sublimation Growth |
| Abstract |
Over the past year, II-VI has transitioned from 2” to 3” commercial SiC
substrates. Large-diameter semi-insulating 6H-SiC and n-type 4H-SiC single crystals are
grown using the Advanced PVT growth process. Expansion of boule diameter from 2 to 3
and up to 4.25 inches has been carried out using a specially designed growth technique.
Stable semi-insulating properties in 6H-SiC are achieved by precise vanadium compensation.
The technique of compensation is optimized to produce a controlled and spatially uniform
distribution of vanadium and high and spatially uniform electrical resistivity reaching 10
10
–
1011 ·cm. N-type 3-inch 4H-SiC crystals are grown using doping with nitrogen, and 3-inch
4H-SiC substrates show uniform resistivity of about 0.018 ·cm. The best quality semiinsulating
(SI) 3” 6H-SiC substrates demonstrate micropipe density of 3 cm-2, and n-type 3”
4H-SiC substrates - about 1 cm-2. X-ray rocking curve topography of the produced 3” SiC
substrates is used for evaluation of their crystal quality. |
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