Paper Title:
Structural Defects and Critical Electric Field in 3C-SiC
  Abstract

3C-SiC p-type epilayers were grown to thicknesses of 1.5, 3, 6 and 10 μm on 2.5° off-axis Si(001) substrates by chemical vapor deposition (CVD). Silane and propane were used as precursors. Structural analysis of epilayers was performed using transmission electron microscopy (TEM), high-resolution x-ray diffractometry (HRXRD), and Raman spectroscopy. TEM showed defect densities (stacking faults, twins and dislocations) decreasing with increasing distance from the SiC/Si interface as the lattice mismatch stress is relaxed. This observation was corroborated by a monotonic decrease in HRXRD peak width (FWHM) from 780 arcsecs (1.5 μm thick epilayer) to 350 arcsecs (10 μm thick epilayer). Significant further reduction in x-ray FWHM is possible because the minimum FWHM detected is greater than the theoretical FWHM for SiC (about 12 arcsecs). Raman spectroscopy also indicates that the residual biaxial in-plane strain decreases with increasing epilayer thickness initially, but becomes essentially constant between 6 and 10 μm. Structural defect density shows the most significant reduction in the first 2 μm of growth. Phosphorus implantation was used to generate n+/p junctions for the measurement of the critical electric field in 3C-SiC. Based on current-voltage analyses, the critical electric field in p-type 3C-SiC with a doping of 2x1017 cm-3 is 1.3x106 V/cm.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
431-434
DOI
10.4028/www.scientific.net/MSF.527-529.431
Citation
M. A. Capano, A.R. Smith, B. C. Kim, E.P. Kvam, S. Tsoi, A.K. Ramdas, J. A. Cooper, "Structural Defects and Critical Electric Field in 3C-SiC", Materials Science Forum, Vols. 527-529, pp. 431-434, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kwang Hwa Chung, J.S. Kim, J.S. Kim, Young Jin Kim
Abstract:Based on detailed two-dimensional (2-D) and three-dimensional (3-D) finite element (FE)analyses, this paper attempts to quantify in-plane and...
699
Authors: Yu Long Fang, Jia Yun Yin, Zhi Hong Feng
Chapter 10: Functional Materials
Abstract:The influence of the strain of AlN buffer layers on the strain evolution of GaN epilayers grown on 3-in 6H-SiC substrates by metal-organic...
1242
Authors: O.S. Kolotov, A.V. Matyunin, G.M. Nikoladze, P.A. Polyakov
X. High Frequency Properties
Abstract:The possibility of suppression of gyroscopic magnetization oscillations by increasing an effective in-plane anisotropy field is discussed. It...
589