Paper Title:
Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry
  Abstract

4H-SiC single crystal with a diameter of 1.5’’ has been grown by the seed sublimation method. Regions of mixed polytypes are assessed by high resolution X-ray diffractometry with the asymmetrical diffraction geometry. Multiple reflections are observed from the rocking curve measurements of a longitudinal cut 4H-SiC slice. Those reflections are indexed to be 2131 and 2131 of 4H-SiC, 2130 , 2131 , 2131 , 2132 and 2132 of 6H-SiC, 2131 , 2132 , 2134 , 2135 and 2137 of 15R-SiC respectively based on the lattice constants of different polytypes in SiC crystal. It is believed that the polytypes can be identified by high resolution X-ray diffractometry.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
451-454
DOI
10.4028/www.scientific.net/MSF.527-529.451
Citation
J. Dong, L. Wang, X. B. Hu, X. X. Li, J. Li, S. Z. Jiang, X. F. Chen, X. G. Xu, M. H. Jiang, "Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry", Materials Science Forum, Vols. 527-529, pp. 451-454, 2006
Online since
October 2006
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Price
$32.00
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