Paper Title:
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
  Abstract

A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
461-464
DOI
10.4028/www.scientific.net/MSF.527-529.461
Citation
A. Thuaire, A. Henry, B. Magnusson, P. Bergman, W.M. Chen, E. Janzén, M. Mermoux, E. Bano, "Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques", Materials Science Forum, Vols. 527-529, pp. 461-464, 2006
Online since
October 2006
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