Paper Title:
Origin of the Up-Conversion Process in 4H SiC
  Abstract

The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature photoluminescence microscopy using 488nm and 325nm laser excitation. The experiments were performed on as-irradiated samples and also after annealing isochronally to various temperatures up to 1300°C.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
473-476
DOI
10.4028/www.scientific.net/MSF.527-529.473
Citation
J. W. Steeds, S.A. Furkert, W. Sullivan, G. Wagner, "Origin of the Up-Conversion Process in 4H SiC", Materials Science Forum, Vols. 527-529, pp. 473-476, 2006
Online since
October 2006
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Price
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