Paper Title:
A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
  Abstract

Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
477-480
DOI
10.4028/www.scientific.net/MSF.527-529.477
Citation
W. Sullivan, J. W. Steeds, H. J. von Bardeleben, J.L. Cantin, "A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC", Materials Science Forum, Vols. 527-529, pp. 477-480, 2006
Online since
October 2006
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