Paper Title:
Investigation of the Displacement Threshold of Si in 4H SiC
  Abstract

Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence of the silicon vacancy-related V1 ZPL doublet (~860nm) on electron energy and electron dose has been investigated by low temperature photoluminescence spectroscopy. Furthermore, this luminescence centre has been studied across a broad range of samples of various doping levels. Some annealing characteristics of this centre are reported.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
481-484
DOI
10.4028/www.scientific.net/MSF.527-529.481
Citation
W. Sullivan, J. W. Steeds, "Investigation of the Displacement Threshold of Si in 4H SiC", Materials Science Forum, Vols. 527-529, pp. 481-484, 2006
Online since
October 2006
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Price
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