Paper Title:
Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
  Abstract

The migration of carbon interstitials in n-type 4H-SiC has been revealed with optical and electrical measurements. Furthermore, clear evidence is found that carbon interstitials are involved in the formation of the Z- and S-centers detected by DLTS within the electronic band gap of n-type 4H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
485-488
DOI
10.4028/www.scientific.net/MSF.527-529.485
Citation
G. Alfieri, U. Grossner, E. V. Monakhov, B. G. Svensson, J. W. Steeds, W. Sullivan, "Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 527-529, pp. 485-488, 2006
Online since
October 2006
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