Paper Title:
Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates
  Abstract

A variety of 4H-SiC samples from undoped crystals grown by the physical vapor transport technique have been studied by temperature dependent Hall effect, optical and thermal admittance spectroscopy and thermally stimulated current. In most samples studied the activation energies were in the range 0.9 - 1.6 eV expected for commercial grade HPSI 4H-SiC. However, in several samples from developmental crystals a previously unreported deep level at EC-0.55 ± 0.01 eV was observed. Thermal admittance spectroscopy detected one level with an energy of about 0.53 eV while optical admittance spectroscopy measurements resolved two levels at 0.56 and 0.64 eV. Thermally stimulated current measurements made to study compensated levels in the material detected several peaks at energies in the range 0.2 to 0.6 eV.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
505-508
DOI
10.4028/www.scientific.net/MSF.527-529.505
Citation
W.C. Mitchel, W. D. Mitchell, S.R. Smith, G.R. Landis, A.O. Evwaraye, Z.Q. Fang, D. C. Look, J.R. Sizelove, "Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 505-508, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Martin Rambach, Lothar Frey, Anton J. Bauer, Heiner Ryssel
Abstract:Characterization of post implantation annealing steps is done by extracting the activation and compensation data of implanted Al atoms....
827
Authors: Wei Quan Shao, Shaou Chen, Da Li, Ping Qi, Yong Wan, Yong Cheng Zhang
Abstract:The sintering activation energy of high-purity alumina powders with different particle sizes was evaluated under non-isothermal condition....
686
Authors: Ryo Hattori, Tomokatsu Watanabe, T. Mitani, Hiroaki Sumitani, Tatsuo Oomori
Abstract:Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated....
585
Authors: Jung Ho Lee, Jung Jun Ahn, Anders Hallén, Carl Mikael Zetterling, Sang Mo Koo
Chapter 5: Processing of SiC
Abstract:In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The...
905
Authors: Alexander Vorobjev, Aleksandr Ponomarev, Aleksei N. Lachinov
Chapter 3: Nonlinear and Chaotic Phenomena in Сondensed Matter
Abstract:The article proposes a method of studying the localized states (“traps”) in the band gap of dielectrics. The method combines both the method...
219