Resistivity Distribution in Undoped 6H-SiC Boules and Wafers |
| Journal |
Materials Science Forum (Volumes 527 - 529) |
| Volume |
Silicon Carbide and Related Materials 2005 |
| Edited by |
Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages |
51-54 |
| DOI |
10.4028/www.scientific.net/MSF.527-529.51 |
| Online since |
October, 2006 |
| Authors |
Qiang Li,
A.Y. Polyakov,
Marek Skowronski,
Edward K. Sanchez,
Mark J. Loboda,
Mark A. Fanton,
Timothy Bogart,
Rick D. Gamble,
N.B. Smirnov,
Yuri N. Makarov
|
| Keywords |
Compensation, Deep Center, Physical Vapor Deposition, Shallow Impurities, Stoichiometry, Uniformity |
| Abstract |
For undoped 6H-SiC boules grown by physical vapor transport the variations of resistivity,
of the type and density of deep electron and hole traps, and of the concentration of nitrogen and boron
were studied as a function of position in the cross section normal to the growth axis and along the
growth direction. It was observed that the concentrations of all deep electron and hole traps decreased
when moving from seed to tail of the boule and from the center to the edge of the wafers. Modeling of
the growth process suggests that the C/Si ratio increases in a similar fashion and could be responsible
for observed changes. We also discuss the implications of such stoichiometry changes on
compensation mechanisms rendering the crystals semi-insulating and on electrical uniformity of
SI-SiC wafers. |
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