Paper Title:
Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
  Abstract

For undoped 6H-SiC boules grown by physical vapor transport the variations of resistivity, of the type and density of deep electron and hole traps, and of the concentration of nitrogen and boron were studied as a function of position in the cross section normal to the growth axis and along the growth direction. It was observed that the concentrations of all deep electron and hole traps decreased when moving from seed to tail of the boule and from the center to the edge of the wafers. Modeling of the growth process suggests that the C/Si ratio increases in a similar fashion and could be responsible for observed changes. We also discuss the implications of such stoichiometry changes on compensation mechanisms rendering the crystals semi-insulating and on electrical uniformity of SI-SiC wafers.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
51-54
DOI
10.4028/www.scientific.net/MSF.527-529.51
Citation
Q. Li, A.Y. Polyakov, M. Skowronski, E. K. Sanchez, M. J. Loboda, M. A. Fanton, T. Bogart, R. D. Gamble, N.B. Smirnov, Y. N. Makarov, "Resistivity Distribution in Undoped 6H-SiC Boules and Wafers", Materials Science Forum, Vols. 527-529, pp. 51-54, 2006
Online since
October 2006
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$32.00
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