Paper Title:
Deep Level Point Defects in Semi-Insulating SiC
  Abstract

The high resistivity of SiC required for many device applications is achieved by compensating residual donors or acceptors with vanadium or intrinsic defects. This work addresses the defect levels of substitutional vanadium and the positively charged carbon vacancy (VC +) in semiinsulating (SI) SiC. After reviewing the earlier studies related to both defects, the paper focuses on temperature-dependent Hall measurements and photo-induced electron paramagnetic resonance (EPR) experiments of 4H and 6H SI SiC. In vanadium-doped samples, a V3+/4+ level near Ec-1.1 eV (4H) and Ec-0.85 eV (6H) is estimated by a comparison of dark EPR spectra and the activation energy determined from the Hall data, assuming that vanadium controls the Fermi level. In high purity semiinsulating substrates, analysis of time-dependent and steady-state photo-EPR data suggests that the plus-to-neutral transition of the carbon vacancy involves a structural relaxation of about 0.6 eV.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
517-522
DOI
10.4028/www.scientific.net/MSF.527-529.517
Citation
M. E. Zvanut, W. W. Lee, H. Y. Wang, W.C. Mitchel, W. D. Mitchell, "Deep Level Point Defects in Semi-Insulating SiC", Materials Science Forum, Vols. 527-529, pp. 517-522, 2006
Online since
October 2006
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$32.00
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