Paper Title:
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
  Abstract

Electron paramagnetic resonance (EPR) studies of the P6/P7 centers in 4H- and 6H-SiC are reported. The obtained principal values of the hyperfine tensors of C and Si neighbors are in good agreement with the values of the neutral divacancy (VCVSi 0) calculated by ab initio supercell calculations. The results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCSi 2+), are related to the triplet ground states of the C3v/C1h configurations of VCVSi 0.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
527-530
DOI
10.4028/www.scientific.net/MSF.527-529.527
Citation
N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzén, "Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC", Materials Science Forum, Vols. 527-529, pp. 527-530, 2006
Online since
October 2006
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