Paper Title:
Thermal Evolution of Defects in Semi-Insulating 4H SiC
  Abstract

High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
531-534
DOI
10.4028/www.scientific.net/MSF.527-529.531
Citation
W.E. Carlos, E.R. Glaser, N.Y. Garces, B.V. Shanabrook, M. A. Fanton, "Thermal Evolution of Defects in Semi-Insulating 4H SiC", Materials Science Forum, Vols. 527-529, pp. 531-534, 2006
Online since
October 2006
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