Paper Title:
Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
  Abstract

We present new electron-paramagnetic-resonance (EPR) data on the HEI4/SI5 center in 4H-SiC. So far, the SI5 (SI-5) center has been observed only in as-grown SiC substrates; however, we found that it can be created by electron irradiation to commercial n-type 4H-SiC. The artificially created SI5 center, which we had preliminary called HEI4, was found to be identical with the SI5 center in as-grown SiC. A high-intensity HEI4/SI5 spectrum of irradiated SiC revealed clear hyperfine structures of 29Si and 13C, which enabled us to identify the origin of this center as a carbon antisite-vacancy pair in the negative charge state (CSi-VC –). We assessed its electronic levels using photo-EPR.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
543-546
DOI
10.4028/www.scientific.net/MSF.527-529.543
Citation
T. Umeda, N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzén, "Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 543-546, 2006
Online since
October 2006
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$32.00
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